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1 Publication Order Number :
NGTB10N60R2DT4G/D
www.onsemi.com
© Semiconductor Components Industries, LLC, 2015
January 2015 - Rev. 2
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of this data sheet.
NGTB10N60R2DT4G
Features
Reverse Conducting II IGBT
IGBT VCE(sat)=1.7V (typ) [IC=10A, VGE=15V]
IGBT tf=65ns (typ)
Diode VF=1.5V (typ) [IF=10A]
Diode trr=90ns (typ)
5s Short Circuit Capability
Applications
General Purpose Inverter
Specifications
Absolute Maximum Ratings at Ta=25C, Unless otherwise specified
Parameter Symbol Value Unit
Collector to Emitter Voltage VCES 600 V
Gate to Emitter Voltage VGES 20 V
Collector Current (DC) @Tc=25C *2 IC *1 20 A
Limited by Tjmax @Tc=100C *2 10 A
Collector Current (Peak) ICP 40 A
Pulse width Llimited by Tjmax
Diode Average Output Current IO 10 A
Power Dissipation PD 72 W
Tc=25C
(Our ideal heat dissipation condition)
*2
Junction Temperature Tj 175 C
Storage Temperature Tstg 55 to +175 C
Note : *1 Collector Current is calculated from the following formula.
*2 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching
the device to water-cooled radiator made of aluminum.
IGBT
600V, 10A, N-Channel
Tjmax - Tc
IC(Tc)= Rth(j-c)
×
VCE(sat) (IC(Tc))
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Marking Diagram
Electrical Connection
N-Channel
1
3
2
,4
1:Gate
2:Collecto
r
3:Emitter
4:Collecto
r
DPAK
123
4
CASE 369C
NGTB10N60R2DT4G
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2
Electrical Characteristics at Ta=25C, Unless otherwise specified
Parameter Symbol Conditions Value Unit
min typ max
Collector to Emitter Breakdown Voltage V(BR)CES I
C=1mA, VGE=0V 600 V
Collector to Emitter Cut off Current ICES V
CE=600V, VGE=0V Tc=25C 10 A
Tc=150C 1 mA
Gate to Emitter Leakage Current IGES V
GE=20V, VCE=0V
100 nA
Gate to Emitter Threshold Voltage VGE(th) VCE=20V, IC=160A 4.5 7.0 V
Collector to Emitter Saturation Voltage VCE(sat) VGE=15V, IC=10A Tc=25C 1.7 2.1 V
Tc=100C 1.9 2.3 V
Forward Diode Voltage VF I
F=10A 1.5 2.1 V
Input Capacitance Cies
VCE=20V, f=1MHz
1340 pF
Output Capacitance Coes 45 pF
Reverse Transfer Capacitance Cres 33 pF
Turn-ON Delay Time td(on)
VCC=300V, IC=10A
RG=30, L=500H
VGE=0V/15V
Vclamp=400V
Tc=25C
See Fig.1, See Fig.2
48 ns
Rise Time tr 34 ns
Turn-ON Time ton 188 ns
Turn-OFF Delay Time td(off) 120 ns
Fall Time tf 65 ns
Turn-OFF Time toff 220 ns
Turn-ON Energy Eon 412 J
Turn-OFF Energy Eoff 140 J
Total Gate Charge Qg
VCE=300V, VGE=15V, IC=10A
53 nC
Gate to Emitter Charge Qge 10 nC
Gate to Collector “Miller” Charge Qgc 25 nC
Diode Reverse Recovery Time trr I
F=10A,di/dt=300A/s, VCC=300V, See Fig.3 90 ns
Thermal Characteristics at Ta=25C, Unless otherwise specified
Parameter Symbol Conditions Value Unit
Thermal Resistance IGBT (Junction to Case)
Rth(j-c) (IGBT)
Tc=25C
(Our ideal heat dissipation condition) *2 2.07 C/W
Thermal Resistance (Junction to Ambient)
Rth(j-a)
100 C/W
Note : *2 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching
the device to water-cooled radiator made of aluminum.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
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NGTB10N60R2DT4G
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6
Fig.1 Switching Time Test Circuit Fig.2 Timing Chart
Fig.3 Reverse Recovery Time Test Circuit
90%
0
90%
010%
10%
VGE
VCE
IC
10%
10%
90%
10%
toff
td(off)
tftr
td(on)
ton
Eoff Eon
VCC
NGTB10N60R2DT4G
500H
Driver IGBT
DUT
RGVCC
NGTB10N60R2DT4G
DUT
Di
o
de
200H
0.001
0.01
0.1
1.0
Rth(j-c) -- Pulse Time
Pulse Time, PT -- s
Thermal Resistance, Rth(j-c) -- ºC/W
0.000001 0.00001 20.0001
357 2 0.001
35
7
23 5723 57 0.01 20.1
35
72 1
357 2 10
357
Duty Cycle=0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
Reverse Recovery Time, trr -- ns
trr -- IF
Forward Current, IF -- A
200
250
150
0
50
100
0
300
515 3025 40 45
Tc=25°C
VCC=300V
di/dt=300A/μs
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
10
10 20 35
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NGTB10N60R2DT4G
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7
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject toall
applicable copyright laws and is not for resale in any manner.
Package Dimensions
unit : mm
1:Gate
2:Collector
3:Emitter
4:Collector
ORDERING INFORMATION
Device Package
Shipping note
NGTB10N60R2DT4G DPAK 2500
pcs. / reel
Pb-Free
And
Halogen Free
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE E
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 8:
PIN 1. N/C
2. CATHODE
3. ANODE
4. CATHODE
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. RESISTOR ADJUST
4. CATHODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. ANODE
b
D
E
b3
L3
L4b2
M
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.235 0.245 5.97 6.22
E0.250 0.265 6.35 6.73
A0.086 0.094 2.18 2.38
b0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.028 0.045 0.72 1.14
c0.018 0.024 0.46 0.61
e0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 0.040 1.01
L0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z0.155 3.93
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN
DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
12 3
4
XXXXXX = Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
WW = Work Week
G = Pb-Free Package
AYWW
XXX
XXXXXG
XXXXXXG
ALYWW
DiscreteIC
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244 3.00
0.118
6.17
0.243
mm
inches
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer
to device data sheet for actual part
marking.
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2
GAUGE
PLANE
DETAIL A
ROTATED 90 CW
eBOTTOM VIEW
Z
BOTTOM VIEW
SIDE VIEW
TOP VIEW
ALTERNATE
CONSTRUCTION
NOTE 7
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