Schottky Diodes in CSP and DFN Packages

Diodes announces a range of Schottky diodes in minuscule CSP and DFN packages. These small packages facilitate varied applications, such as blocking, electrical over-stress, and boost-strap diodes, in many battery-powered products, such as IoT wearables, smartphones, and virtual/augmented reality headsets. Many of these Schottky diodes in CSP and DFN packages are also qualified to AEC-Q101 standards and are supported by the PPAP process.

Features

• Minuscule packages and robustness
  • These ultra-low profile and small footprint surface mountable packages enable compact form-factors of the adopting end systems. Freeing of bond-wires inside the CSP package and the support of PPAP ensure long-term reliability
• Low forward voltage
  • With the maximum forward voltage (VF) as low as 0.35 V, these CSP/DFN packaged Schottky diodes enable very low conduction losses to be realized. This results in lower operating temperatures and excellent long-term reliability
• Low leakage current
  • The low leakage current (IR) translates to low ambient temperature when the system is on standby mode. In battery-powered systems, the standby time is significantly extended
• Wide range of reverse breakdown voltages and output currents
  • These devices offer a comprehensive range of reverse breakdown voltages (VBR_MIN = 20 V to 70 V) and output currents (IO_MAX = 70 mA to 2 A), meeting the expectation of many applications with demanding requirements