650 V EliteSiC - Silicon Carbide Diodes

onsemi's diodes provide superior switching performance and high reliability

Image of onsemi's 650 V Silicon Carbide Diodesonsemi's silicon carbide EliteSiC Schottky diodes use a technology that provides superior switching performance and higher reliability compared to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance make silicon carbide the next generation of power semiconductors. System benefits include high efficiency, higher operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Features
  • Easy to parallel
  • High surge current capacitance
  • Max junction temperature: +175°C
  • No reverse recovery/no forward recovery
  • Higher switching frequency
  • Low forward voltage (VF)
  • Positive temperature coefficient
  • AEC-Q101 Qualified and PPAP capable
Applications
  • Automotive HEV-EV DC/DC converters
  • Automotive HEV-EV onboard chargers
  • Industrial power
  • PFC
  • Solar
  • UPS
  • Welding

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Published: 2019-11-06