Name: IMWH170R650M1XKSA1
Brand: Infineon Technologies
SKU: 448-IMWH170R650M1XKSA1-ND
Price: 223.4 THB
Availability: InStock

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IMWH170R650M1XKSA1
DigiKey Part Number	448-IMWH170R650M1XKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMWH170R650M1XKSA1
Description	IMWH170R650M1XKSA1
Manufacturer Standard Lead Time	39 Weeks
Customer Reference
Detailed Description	N-Channel 1700 V 7.5A (Tc) 88W (Tc) Through Hole PG-TO247-3-U04
Datasheet	Datasheet
EDA/CAD Models	IMWH170R650M1XKSA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolSiC™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1700 V
Current - Continuous Drain (Id) @ 25°C	7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	12V, 15V
Rds On (Max) @ Id, Vgs	580mOhm @ 1.5A, 15V
Vgs(th) (Max) @ Id	5.7V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs	8.1 nC @ 12 V
Vgs (Max)	15V, 12V
Input Capacitance (Ciss) (Max) @ Vds	337 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	88W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-U04
Package / Case	TO-247-3

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Tube