Name: PSMN3R7-100BSEJ
Brand: Nexperia USA Inc.
SKU: 1727-PSMN3R7-100BSEJTR-ND
Price: 211.58 THB
Availability: OutOfStock

PSMN3R7-100BSEJ is out of stock and can be placed on backorder.

Available Substitutes:

Direct

onsemi

In Stock: 110

Unit Price: ฿110.19000

Similar

Texas Instruments

In Stock: 452

Unit Price: ฿97.07000

Similar

Infineon Technologies

In Stock: 0

Unit Price: ฿0.00000

Similar

STMicroelectronics

In Stock: 150

Unit Price: ฿84.78000

Similar

Toshiba Semiconductor and Storage

In Stock: 0

Unit Price: ฿0.00000

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

PSMN3R7-100BSEJ
DigiKey Part Number	1727-PSMN3R7-100BSEJTR-ND - Tape & Reel (TR) 1727-PSMN3R7-100BSEJCT-ND - Cut Tape (CT) 1727-PSMN3R7-100BSEJDKR-ND - Digi-Reel®
Manufacturer	Nexperia USA Inc.
Manufacturer Product Number	PSMN3R7-100BSEJ
Description	MOSFET N-CH 100V 120A D2PAK
Manufacturer Standard Lead Time	13 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 120A (Tc) 405W (Tc) Surface Mount D2PAK
Datasheet	Datasheet
EDA/CAD Models	PSMN3R7-100BSEJ Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Nexperia USA Inc.
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.95mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	246 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	16370 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	405W (Tc)
Operating Temperature	175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number	PSMN3R7