Name: TP65H480G4JSG-TR
Brand: Renesas Electronics Corporation
SKU: 1707-TP65H480G4JSG-TR-ND
Price: 70.48 THB
Availability: InStock

N-Channel 650 V 3.6A (Tc) 13.2W (Tc) Surface Mount 3-PQFN (5x6)

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TP65H480G4JSG-TR
DigiKey Part Number	1707-TP65H480G4JSG-TR-ND - Tape & Reel (TR) 1707-TP65H480G4JSG-CT-ND - Cut Tape (CT) 1707-TP65H480G4JSG-DKR-ND - Digi-Reel®
Manufacturer	Renesas Electronics Corporation
Manufacturer Product Number	TP65H480G4JSG-TR
Description	GANFET N-CH 650V 3.6A 3PQFN
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 3.6A (Tc) 13.2W (Tc) Surface Mount 3-PQFN (5x6)
Datasheet	Datasheet
EDA/CAD Models	TP65H480G4JSG-TR Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Renesas Electronics Corporation
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	8V
Rds On (Max) @ Id, Vgs	560mOhm @ 3.4A, 8V
Vgs(th) (Max) @ Id	2.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 8 V
Vgs (Max)	±18V
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	13.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	3-PQFN (5x6)
Package / Case	3-PowerTDFN
Base Product Number	TP65H480