Name: SCTH40N120G2V-7
Brand: STMicroelectronics
SKU: 497-SCTH40N120G2V-7TR-ND
Price: 538.53 THB
Availability: OutOfStock

SCTH40N120G2V-7 is available for purchase but is not normally stocked.

Available Substitutes:

MFR Recommended

STMicroelectronics

In Stock: 0

Unit Price: ฿611.00000

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SCTH40N120G2V-7
DigiKey Part Number	497-SCTH40N120G2V-7TR-ND - Tape & Reel (TR) 497-SCTH40N120G2V-7CT-ND - Cut Tape (CT) 497-SCTH40N120G2V-7DKR-ND - Digi-Reel®
Manufacturer	STMicroelectronics
Manufacturer Product Number	SCTH40N120G2V-7
Description	SILICON CARBIDE POWER MOSFET 120
Customer Reference
Detailed Description	N-Channel 1200 V 36A (Tc) 238W (Tc) Surface Mount H2PAK-7
Datasheet	Datasheet
EDA/CAD Models	SCTH40N120G2V-7 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	STMicroelectronics
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Last Time Buy
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 18V
Vgs(th) (Max) @ Id	4.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	61 nC @ 18 V
Vgs (Max)	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1233 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	238W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	H2PAK-7
Base Product Number	SCTH40