Name: TK10E60W,S1VX
Brand: Toshiba Semiconductor and Storage
SKU: TK10E60WS1VX-ND
Price: 148.85 THB
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK10E60W,S1VX
DigiKey Part Number	TK10E60WS1VX-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK10E60W,S1VX
Description	MOSFET N-CH 600V 9.7A TO220
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 9.7A (Ta) 100W (Tc) Through Hole TO-220
Datasheet	Datasheet
EDA/CAD Models	TK10E60W,S1VX Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	380mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id	3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	700 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	100W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Base Product Number	TK10E60