HMC1126 GaAs, pHEMT, Low Noise Amplifier

ADI's HMC1126ACEZ is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 0.4 GHz to 52 GHz. The HMC1126ACEZ amplifier inputs/outputs are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).

The HMC1126-EVALZ is a 4-layer printed circuit board (PCB) for evaluation of the HMC1126ACEZ. The substrate between the top layer and the first internal layer is 12 mils thick and is made from Rogers 4003C. The RFIN and RFOUT ports on the HMC1126-EVALZ are populated with 1.85 mm, female coaxial connectors, and the respective RF traces have a 50 Ω characteristic impedance. The HMC1126-EVALZ is populated with components suitable for use over the entire -40°C to +85°C operating temperature range of the HMC1126ACEZ.