SCT055HU65G3AG Automotive-Grade Silicon Carbide Power MOSFET

This silicon carbide STPOWER MOSFET device has been developed using STMicroelectronics’ advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low R_DS(ON) over the entire temperature range combined with low capacitances and very high switching operations, improving application performance in frequency, energy efficiency, system size, and weight reduction.

Features

• Enhanced R_on×chip size and R_on×Q_g lead to better inverter efficiency thus obtaining extra mileage for EV
• The very high voltage rating allows fast DC charging for EV
• The very fast intrinsic diode allows the bidirectionality for the EV's onboard chargers
• The very high frequency capability involves smaller factor systems
• The advanced surface mounted (SMD) HU3PAK package with top-side cooling allows a smaller form factor, higher design flexibility, and better thermal performance while increasing the power density