DTMOS-VI 600 V and 650 V Power MOSFETs

Toshiba DTMOS-VI super junction MOSFETs are designed for switching applications

Image of Toshiba DTMOS-VI 600 V and 650 V Power MOSFETs The latest Toshiba DTMOS-VI process offers 600 V and 650 V MOSFETs by utilizing a powerful super junction process with a robust or faster body diode to improve efficiency in critical switching applications such as power supplies, data centers, and solar inverters.

These products, employing the DTMOS-VI (HSD) process, utilize high-speed body diodes to enhance the reverse recovery characteristics, which are crucial for bridge circuit and inverter circuit applications. Against the standard DTMOS-VI process, they achieve a 65% reduction in reverse recovery time (trr), and an 88% reduction in reverse recovery charge (Qrr) (measurement conditions: -dIDR/dt=100 A/μs).

Both DTMOS-VI processes are available in a variety of packages, including standard through-hole TO-220 and TO-247 Packages, as well as surface mount options such as TOLL or DFN8x8.

Features
  • Lowest on-resistance in family is 0.024 Ω (max) (VGS=10 V)
  • Low RDS(ON) x Qgd (drain-source on-resistance x gate-drain charge)
  • High efficiency in switched-mode power supplies
  • Tight threshold voltage for reliable operation
  • Built-in high-speed diode offers improved reverse recovery loss
Applications
  • Industrial equipment
  • Switching power supplies (data center servers, communications equipment, and more)
  • EV charging stations
  • Power conditioners for photovoltaic generators
  • Uninterruptible power systems
Diagram (Click to Enlarge)

Image of Comparison of drain-source On-resistance and gate-drain charge

DTMOS-VI 600 V and 650 V Power MOSFETs

รูปภาพManufacturer Part Numberคำอธิบายเดรนสู่แหล่งจ่ายแรงดันไฟฟ้า (Vdss)กระแสไฟฟ้า - เดรนอย่างต่อเนื่อง (Id) @ 25°CAvailable Quantityราคาดูรายละเอียด
N-CH MOSFET, 600 V, 0.155 @10V,TK155U60Z1,RQN-CH MOSFET, 600 V, 0.155 @10V,600 V17A (Ta)4000 - Immediate$112.45ดูรายละเอียด
N-CH MOSFET, 600 V, 0.125 @10V,TK125U60Z1,RQN-CH MOSFET, 600 V, 0.125 @10V,600 V20A (Ta)4000 - Immediate$124.48ดูรายละเอียด
N-CH MOSFET, 600 V, 0.099 @10V,TK099U60Z1,RQN-CH MOSFET, 600 V, 0.099 @10V,600 V25A (Ta)4000 - Immediate$143.65ดูรายละเอียด
N-CH MOSFET, 600 V, 0.08 @10V, TTK080U60Z1,RQN-CH MOSFET, 600 V, 0.08 @10V, T600 V30A (Ta)4000 - Immediate$164.45ดูรายละเอียด
N-CH MOSFET, 650 V, 0.115 @10V,TK115U65Z5,RQN-CH MOSFET, 650 V, 0.115 @10V,650 V24A (Ta)4000 - Immediate$201.18ดูรายละเอียด
N-CH MOSFET, 650 V, 0.095 @10V,TK095U65Z5,RQN-CH MOSFET, 650 V, 0.095 @10V,650 V29A (Ta)4000 - Immediate$227.83ดูรายละเอียด
DTMOS VI TOLL PD=190W F=1MHZTK110U65Z,RQDTMOS VI TOLL PD=190W F=1MHZ650 V24A (Ta)5932 - Immediate$177.78ดูรายละเอียด
MOSFET N-CH 650V 24A 5DFNTK125V65Z,LQMOSFET N-CH 650V 24A 5DFN650 V24A (Ta)9890 - Immediate$190.45ดูรายละเอียด
MOSFET N-CH 650V 30A 5DFNTK099V65Z,LQMOSFET N-CH 650V 30A 5DFN650 V30A (Ta)4730 - Immediate$208.98ดูรายละเอียด
MOSFET N-CH 650V 18A 5DFNTK170V65Z,LQMOSFET N-CH 650V 18A 5DFN650 V18A (Ta)4938 - Immediate$155.35ดูรายละเอียด
MOSFET N-CH 650V 15A 5DFNTK210V65Z,LQMOSFET N-CH 650V 15A 5DFN650 V15A (Ta)4616 - Immediate$160.23ดูรายละเอียด
650V DTMOS6-HIGH SPEED DIODETK095N65Z5,S1F650V DTMOS6-HIGH SPEED DIODE650 V29A (Ta)195 - Immediate$224.90ดูรายละเอียด
650V DTMOS6-HSD TO-247 68MOHMTK068N65Z5,S1F650V DTMOS6-HSD TO-247 68MOHM650 V37A (Ta)235 - Immediate$318.83ดูรายละเอียด
N-CH MOSFET 600V 0.024OHM 10VTK024N60Z1,S1FN-CH MOSFET 600V 0.024OHM 10V600 V80A (Ta)104 - Immediate$498.23ดูรายละเอียด
650V DTMOS6 HSD 42MOHM TO-247TK042N65Z5,S1F650V DTMOS6 HSD 42MOHM TO-247650 V55A (Ta)7 - Immediate$449.80ดูรายละเอียด
MOSFET N-CH 650V 38A TO247TK065N65Z,S1FMOSFET N-CH 650V 38A TO247650 V38A (Ta)33 - Immediate$300.63ดูรายละเอียด
MOSFET N-CH 650V 24A TO220SISTK110A65Z,S4XMOSFET N-CH 650V 24A TO220SIS650 V24A (Ta)27 - Immediate$190.78ดูรายละเอียด
POWER MOSFET TRANSISTOR TO-247(OTK110N65Z,S1FPOWER MOSFET TRANSISTOR TO-247(O650 V24A (Ta)32 - Immediate$226.20ดูรายละเอียด
Published: 2025-08-20