Toshiba Electronic Devices and Storage Corporation

Small Signal MOSFETs

Toshiba's small signal MOSFETs designed to save critical board space

Toshiba Semiconductor and Storage's Small Signal MOSFETsToshiba's broad selection of low on-resistance and low-voltage drive small signal MOSFETs (S-MOS) is suitable for high-speed switching devices in portable electronics equipment. These MOSFETs feature low capacitance ratings and are designed to save critical board space. Among the features and benefits of these devices are no carrier storage effect, superior frequency and switching characteristics, rugged and no current concentration, voltage-controlled device resulting in low drive power, and easy parallel connection.

Features
  • Low voltage
    • low driving voltage
    • VDSS = 20 V, 30 V, 60 V
  • High switching performance
  • Low on-resistance
  • Ultra small package
  • No carrier storage effect; superior frequency and switching characteristics
  • Rugged and no current concentration
  • Voltage-controlled device, hence low drive power
  • Easy parallel connection

Signal MOSFETs

รูปภาพManufacturer Part NumberคำอธิบายAvailable Quantityราคา
MOSFET P-CH 20V 4.4A UFMSSM3J130TU,LFMOSFET P-CH 20V 4.4A UFM96461 - Immediate$22.75ดูรายละเอียด
MOSFET 2N-CH 20V 0.18A ES6SSM6N35FE,LMMOSFET 2N-CH 20V 0.18A ES60 - Immediate$11.05ดูรายละเอียด
MOSFET 2N-CH 20V 0.5A ES6SSM6N36FE,LMMOSFET 2N-CH 20V 0.5A ES6648 - Immediate$12.03ดูรายละเอียด
MOSFET 2N-CH 30V 0.1A ES6SSM6N44FE,LMMOSFET 2N-CH 30V 0.1A ES668820 - Immediate$11.70ดูรายละเอียด
MOSFET 2P-CH 30V 0.1A ES6SSM6P15FE(TE85L,F)MOSFET 2P-CH 30V 0.1A ES612707 - Immediate$5.85ดูรายละเอียด
MOSFET 2P-CH 20V 0.33A ES6SSM6P36FE,LMMOSFET 2P-CH 20V 0.33A ES613 - Immediate$12.03ดูรายละเอียด
Published: 2010-08-05

Related Product Training Modules

General Purpose Discrete Items Overview of the general purpose discrete items including diodes, MOSFETs, bipolar transistors, and transistors with built-in resistors.
Small Signal MOSFET The small signal MOSFET's have a low driving voltage of 1.2V along with no carrier storage effect.