eGaN FETs for DC-DC Conversion

eGan® FETs for DC-DC Conversion

EPC

This tutorial will discuss some of the key eGaN FET characteristics and the advantages offered by converters designed using EPC’s eGaN power FETs. Also, this presentation will discuss eGaN FET performance in high frequency 12V-1V DC-DC converters, 24V-1V DC-DC converters, and how the use of eGaN power FETs from EPC has made a 48V-1V converter practical for the first time. 

 

Related Parts

รูปภาพManufacturer Part Numberคำอธิบายฟังก์ชั่นแบบฝังIC / ชิ้นส่วนที่ใช้Available Quantityราคาดูรายละเอียด
EVAL BOARD FOR EPC2015EPC9001EVAL BOARD FOR EPC2015ตัวขับฮาฟ H-บริดจ์ (FET ภายนอก)ไม่EPC20150 - Immediate$2,925.00ดูรายละเอียด
EVAL BOARD FOR EPC2001EPC9017EVAL BOARD FOR EPC2001ตัวขับฮาฟ H-บริดจ์ (FET ภายนอก)ไม่EPC20010 - Immediate$3,859.38ดูรายละเอียด
EVAL BOARD FOR EPC8007EPC9027EVAL BOARD FOR EPC8007ตัวขับฮาฟ H-บริดจ์ (FET ภายนอก)ไม่EPC80070 - Immediate$4,671.88ดูรายละเอียด
EVAL BOARD FOR EPC2001EPC9002EVAL BOARD FOR EPC2001ตัวขับฮาฟ H-บริดจ์ (FET ภายนอก)ไม่EPC20010 - Immediate$2,925.00ดูรายละเอียด
PTM Published on: 2010-01-22

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High-Step-Down-Ratio Buck Converters for Intermediate Bus Architectures Solutions for the design challenges of high-step-down-ratio DC/DC buck converters including Silicon & eGan FETs.

Related Product Training Modules

Driving eGaN FETs with the LM5113 The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.
Driving eGaN® Power Transistors EPC brings enhancement mode to GaN giving the design engineer a whole new spectrum of performance compared with silicon power MOSFETs.
eGan® FET's Characteristics The operation of EPC’s enhancement mode gallium nitride transistors.