UF3SC SiC FETs with <10 mΩ RDS(on)

onsemi UF3SC SiC FETs with R_DS(ON) levels of 7 mΩ at 650 V and 10 mΩ at 1200 V deliver unprecedented levels of performance and efficiency for use in high power. These high-performance SiC FET devices are based on a unique cascode circuit configuration in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allow for a true drop-in replacement to Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction devices. Available in the TO-247-4L package, these devices exhibit ultra-low gate charge and exceptional reverse recovery characteristics, making them ideal for switching inductive loads and any application requiring standard gate drive.