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Silicon-carbide has a much higher critical electric field. Shown here is a comparison of the electric field of silicon-carbide versus other Silicon products. Essentially, less thickness and less resistivity are required to sustain the same breakdown voltage as silicon. As a result, it is possible to design diodes with a much higher breakdown voltage for the same thickness. Schottky diodes are limited to around 200 V. In contrast, silicon-carbide structures are devices that are easily available up to 1200 V with a possibility of structures up to 1700 V.
PTM Published on: 2014-09-30
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