Texas Instruments LMG1210 MOSFET & GaN FET Driver | DigiKey Daily

Texas Instruments offers their LMG1210, which is a 200-volt, half-bridge MOSFET and gallium nitride field-effect transistor driver. It’s designed for ultra-high frequency, high-efficiency applications that feature adjustable dead-time capability, ultra-small propagation delay, and 3.4 nanoseconds of high-side to low-side matching to optimize system efficiency. It includes an internal LDO which ensures a gate-drive voltage of 5 volts regardless of the supply voltage, and it features two control input options: a single PWM input with adjustable dead-time, and independent input mode. The IC offers a wide temperature range from minus 40 degrees Celsius to 125 degrees Celsius and is offered in a low-inductance WQFN package. Applications include high-speed DC-to-DC converters, RF envelope tracking, Class D audio amps, Class E wireless charging, and more.