1700 V EliteSiC Diodes
onsemi‘s diodes have temperature independent switching characteristics and excellent thermal performance
onsemi‘s 1700 V EliteSiC Schottky diodes use a technology that provides superior switching performance and higher reliability compared to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance set SiC as the next generation of power semiconductors. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost.
- Ease of paralleling
- High surge current capacitance
- Max junction temperature: +175°C
- No reverse recovery/no forward recovery
- Higher switching frequency
- Low forward voltage (VF)
- Positive temperature coefficient
- AEC-Q101 Qualified and PPAP capable
- Automotive HEV-EV DC-DC converters
- Automotive HEV-EV onboard chargers
- Industrial power
- PFC
- Solar
- UPS
- Welding
1700 V EliteSiC Diodes
| รูปภาพ | Manufacturer Part Number | คำอธิบาย | Available Quantity | ราคา | ดูรายละเอียด | |
|---|---|---|---|---|---|---|
![]() | ![]() | NDSH25170A | DIODE SIL CARB 1700V 25A TO2472 | 0 - Immediate | $570.05 | ดูรายละเอียด |
Other Wide Bandgap Solutions
| รูปภาพ | Manufacturer Part Number | คำอธิบาย | Available Quantity | ราคา | ดูรายละเอียด | |
|---|---|---|---|---|---|---|
![]() | ![]() | NTHL080N120SC1 | SICFET N-CH 1200V 44A TO247-3 | 0 - Immediate | See Page for Pricing | ดูรายละเอียด |
![]() | ![]() | FFSD08120A | DIODE SIC 1.2KV 22.5A TO252AA | 2358 - Immediate 2500 - Factory Stock | $213.20 | ดูรายละเอียด |
![]() | ![]() | NCD57001DWR2G | DGTL ISO 5KV 1CH GATE DVR 16SOIC | 1231 - Immediate | $197.93 | ดูรายละเอียด |
![]() | ![]() | FFSB0665B | DIODE SIL CARBIDE 650V 8A TO263 | 627 - Immediate | $97.83 | ดูรายละเอียด |
![]() | ![]() | NCP51705MNTXG | IC GATE DRVR LOW-SIDE 24QFN | 861 - Immediate 114000 - Factory Stock | $185.90 | ดูรายละเอียด |











