1,200 V Discrete Silicon Carbide MOSFETs

Wolfspeed 1,200 V silicon carbide MOSFETs set the standard for performance, ruggedness, and ease of design-in. Extremely fast switching, ultra-low switching loss, and stable conduction loss over temperature assure significant improvement of system efficiency, power density, and overall BOM cost versus silicon MOSFET and IGBT incumbents. They are designed to optimize high-power applications such as uninterruptible power supplies (UPS), motor drives, switched-mode power supplies (SMPS), renewable energy, EV fast chargers, and more. 

Coupled with the 1,200 V SiC Schottky diodes, these MOSFETs create a powerful combination for higher efficiency in applications with strict requirements. Users can evaluate and optimize the high-speed dynamic switching performance of Wolfspeed SiC MOSFETs SpeedVal™ Kit Modular Evaluation Platform.